Invention Grant
- Patent Title: Nonvolatile memory device
- Patent Title (中): 非易失性存储器件
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Application No.: US12418822Application Date: 2009-04-06
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Publication No.: US08208280B2Publication Date: 2012-06-26
- Inventor: Chang-Hee Shin , Ki-Seok Cho
- Applicant: Chang-Hee Shin , Ki-Seok Cho
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2008-0035208 20080416
- Main IPC: G11C17/00
- IPC: G11C17/00
Abstract:
A nonvolatile memory device including one-time programmable (OTP) unit cell is provided. The nonvolatile memory device includes: a unit cell; a detecting unit configured to detect data from the unit cell; and a read voltage varying unit configured to vary an input voltage and supply a varied read voltage to the unit cell.
Public/Granted literature
- US20090262567A1 NONVOLATILE MEMORY DEVICE Public/Granted day:2009-10-22
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