Invention Grant
US08208282B2 Vertically stacked field programmable nonvolatile memory and method of fabrication
有权
垂直堆叠现场可编程非易失性存储器和制造方法
- Patent Title: Vertically stacked field programmable nonvolatile memory and method of fabrication
- Patent Title (中): 垂直堆叠现场可编程非易失性存储器和制造方法
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Application No.: US12899634Application Date: 2010-10-07
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Publication No.: US08208282B2Publication Date: 2012-06-26
- Inventor: Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
- Applicant: Mark G. Johnson , Thomas H. Lee , Vivek Subramanian , Paul Michael Farmwald , James M. Cleeves
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan PC
- Main IPC: G11C11/36
- IPC: G11C11/36
Abstract:
A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
Public/Granted literature
- US20110019467A1 VERTICALLY STACKED FIELD PROGRAMMABLE NONVOLATILE MEMORY AND METHOD OF FABRICATION Public/Granted day:2011-01-27
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