Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12815621Application Date: 2010-06-15
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Publication No.: US08208328B2Publication Date: 2012-06-26
- Inventor: Sang Pyo Hong
- Applicant: Sang Pyo Hong
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0052750 20090615
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory device including a CMOS-type local sensing amplifier circuit is provided. The semiconductor memory device includes a first input/output (I/O) line pair, a second I/O line pair pre-charged to a one-half power voltage level and receives data from the first I/O line pair, and a pull-up circuit pulling up a voltage of one of the second I/O pair to a full power voltage level.
Public/Granted literature
- US20100315893A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-12-16
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