Methods for determining the state of memory cells include using an asymmetric sense amplifier. The methods include sensing the voltages on bit line (BL) and bit line bar (BLB) signals by coupling the BL to a first output node of an imbalanced cross-coupled latch (ICL), the ICL outputting a logic low value if the a difference between the a voltage on the BL and a voltage on the BLB exceeds a threshold. Sensing the voltages includes providing at least a first and a second pull down field effect transistor (FET) each having a channel coupled between the first and second output nodes and a ground node, respectively, in a cross coupled arrangement, wherein the second pull down FET has a channel width that is greater than a channel width of the first pull down FET. Additional methods are disclosed.