Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13045227Application Date: 2011-03-10
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Publication No.: US08208333B2Publication Date: 2012-06-26
- Inventor: Mikihiko Itoh
- Applicant: Mikihiko Itoh
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-297024 20071115
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged in a matrix, a read unit which reads out data from the memory cells in the memory cell array, a write unit which writes data in the memory cells in the memory cell array, a read voltage generating unit which generates a read voltage and supplies the read voltage to the read unit, and a voltage control unit which controls the read voltage in accordance with temperatures.
Public/Granted literature
- US20110157983A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-06-30
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