Invention Grant
- Patent Title: Fuse circuit and semiconductor device having the same
- Patent Title (中): 保险丝电路和具有相同的半导体器件
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Application No.: US12495015Application Date: 2009-06-30
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Publication No.: US08208336B2Publication Date: 2012-06-26
- Inventor: Chang-Ho Do
- Applicant: Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0038412 20090430
- Main IPC: G11C17/18
- IPC: G11C17/18
Abstract:
A fuse circuit includes a fuse unit configured to drive an output terminal via a current path including a fuse in response to a fuse enable signal; and a comparison unit configured to be activated in response to an activation signal for comparing a reference voltage having a predetermined level with a voltage level of the output terminal to generate a fuse state signal.
Public/Granted literature
- US20100277999A1 FUSE CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME Public/Granted day:2010-11-04
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