Invention Grant
US08208511B2 Surface emitting laser, surface emitting laser array, optical scanning device, image forming apparatus, optical transmission module and optical transmission system
有权
表面发射激光器,表面发射激光器阵列,光学扫描装置,成像装置,光传输模块和光传输系统
- Patent Title: Surface emitting laser, surface emitting laser array, optical scanning device, image forming apparatus, optical transmission module and optical transmission system
- Patent Title (中): 表面发射激光器,表面发射激光器阵列,光学扫描装置,成像装置,光传输模块和光传输系统
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Application No.: US12669090Application Date: 2008-11-13
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Publication No.: US08208511B2Publication Date: 2012-06-26
- Inventor: Shunichi Sato , Akihiro Itoh , Takeshi Hino , Naoto Jikutani
- Applicant: Shunichi Sato , Akihiro Itoh , Takeshi Hino , Naoto Jikutani
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2007-295505 20071114; JP2008-016331 20080128; JP2008-136146 20080526
- International Application: PCT/JP2008/071058 WO 20081113
- International Announcement: WO2009/064018 WO 20090522
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/22 ; H01S3/223

Abstract:
A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.
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