Invention Grant
- Patent Title: Semiconductor memory device and wear leveling method
- Patent Title (中): 半导体存储器件和磨损均衡方法
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Application No.: US12351076Application Date: 2009-01-09
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Publication No.: US08209468B2Publication Date: 2012-06-26
- Inventor: Tae-Min Lee
- Applicant: Tae-Min Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0003547 20080111
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
Disclosed is a semiconductor memory device and wear leveling method thereof. The semiconductor memory device including: a nonvolatile memory having pluralities of memory blocks, at least one of the memory blocks storing erasing counts of the memory blocks; and a memory controller managing wear leveling of the nonvolatile memory. The memory controller adjusts a period of managing the wear leveling with reference to the erasing counts.
Public/Granted literature
- US20090182936A1 SEMICONDUCTOR MEMORY DEVICE AND WEAR LEVELING METHOD Public/Granted day:2009-07-16
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