Invention Grant
US08209504B2 Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate
有权
非易失性存储器件,非易失性存储器系统和具有可变读取和写入访问速率的访问设备
- Patent Title: Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate
- Patent Title (中): 非易失性存储器件,非易失性存储器系统和具有可变读取和写入访问速率的访问设备
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Application No.: US12523756Application Date: 2008-01-25
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Publication No.: US08209504B2Publication Date: 2012-06-26
- Inventor: Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
- Applicant: Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2007-019527 20070130; JP2007-100142 20070406; JP2007-100144 20070406
- International Application: PCT/JP2008/051056 WO 20080125
- International Announcement: WO2008/093606 WO 20080807
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
Public/Granted literature
- US20100023678A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND ACCESS DEVICE Public/Granted day:2010-01-28
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