Invention Grant
- Patent Title: System and method for lithography simulation
- Patent Title (中): 光刻模拟系统和方法
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Application No.: US12964697Application Date: 2010-12-09
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Publication No.: US08209640B2Publication Date: 2012-06-26
- Inventor: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- Applicant: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00 ; G06K9/00

Abstract:
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.
Public/Granted literature
- US20110083113A1 System and Method for Lithography Simulation Public/Granted day:2011-04-07
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