Invention Grant
US08209652B2 Semiconductor device and layout method of decoupling capacitor thereof
有权
半导体器件及其去耦电容器的布局方法
- Patent Title: Semiconductor device and layout method of decoupling capacitor thereof
- Patent Title (中): 半导体器件及其去耦电容器的布局方法
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Application No.: US12069316Application Date: 2008-02-08
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Publication No.: US08209652B2Publication Date: 2012-06-26
- Inventor: Jong-Wook Park
- Applicant: Jong-Wook Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2007-0018441 20070223
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A semiconductor device and a layout method of a decoupling capacitor thereof are disclosed. The semiconductor device includes a main power/ground voltage voltage supplying line arranged in a first direction; a plurality of decoupling capacitor cells to reduce power noise generated by the power voltage and the ground voltage in the first direction and in a second direction; a plurality of sub power voltage supplying lines arranged in the second direction in a border of the plurality of decoupling capacitor cells; and a plurality of sub ground voltage supplying lines arranged in a net form in the border of the plurality of decoupling capacitor cells, wherein the plurality of decoupling capacitor cells have a first active region arranged to receive the ground voltage and the second active region disposed to receive the power voltage and to avoid a region where an inversion is formed in the decoupling capacitor.
Public/Granted literature
- US20080203436A1 Semiconductor device and layout method of decoupling capacitor thereof Public/Granted day:2008-08-28
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