Invention Grant
- Patent Title: Temperature sensor circuit
- Patent Title (中): 温度传感器电路
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Application No.: US12509094Application Date: 2009-07-24
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Publication No.: US08210743B2Publication Date: 2012-07-03
- Inventor: Kazuo Hasegawa
- Applicant: Kazuo Hasegawa
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-212156 20080820
- Main IPC: G01K15/00
- IPC: G01K15/00 ; G01K7/01

Abstract:
A temperature sensor circuit includes a band-gap reference voltage circuit. The resistor and diode-connected bipolar transistor of the band-gap reference voltage circuit are separated into a transistor-resistor series circuit and a transistor-diode series circuit. The transistor-resistor series circuit is configured such that an emitter of the bipolar transistor Q21 is connected to a power supply voltage terminal VCC, a collector thereof is grounded via the resistor R2. The transistor-diode series circuit is configured such that an emitter of the bipolar transistor Q20 is connected to the power supply voltage terminal VCC, a collector thereof is connected to a collector of the diode-connected bipolar transistor Q19, and an emitter of the diode-connected bipolar transistor is grounded. A voltage divider circuit 5 having a plurality of output terminals is connected to the transistor-resistor series circuit and the transistor-diode series circuit via first and second buffer circuits 3 and 4, respectively.
Public/Granted literature
- US20100046580A1 TEMPERATURE SENSOR CIRCUIT Public/Granted day:2010-02-25
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