Invention Grant
- Patent Title: Slicing method and method for manufacturing epitaxial wafer
- Patent Title (中): 用于制造外延晶片的切片方法和方法
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Application No.: US12310663Application Date: 2007-08-22
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Publication No.: US08210906B2Publication Date: 2012-07-03
- Inventor: Hiroshi Oishi , Daisuke Nakamata
- Applicant: Hiroshi Oishi , Daisuke Nakamata
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-257392 20060922
- International Application: PCT/JP2007/066231 WO 20070822
- International Announcement: WO2008/035530 WO 20080327
- Main IPC: B24B53/095
- IPC: B24B53/095

Abstract:
A wafer slicing method includes winding a wire around rollers and pressing the wire against an ingot while supplying slurry to the rollers. A previously conducted experiment provides a supply temperature profile of the slurry during the slicing process and the relationship to the axial displacement of the rollers. This relationship is used to implement slurry delivery during the slicing process. The resultant wafers are bowed in a uniform direction. This slicing method provides excellent reproducibility in addition to producing wafers that are bowed in a uniform direction.
Public/Granted literature
- US20090288530A1 Slicing method and method for manufacturing epitaxial wafer Public/Granted day:2009-11-26
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