Invention Grant
- Patent Title: Method for producing single crystal and a method for producing annealed wafer
- Patent Title (中): 单晶的制造方法和退火晶片的制造方法
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Application No.: US11792693Application Date: 2005-10-21
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Publication No.: US08211228B2Publication Date: 2012-07-03
- Inventor: Ryoji Hoshi , Takahiro Yanagimachi
- Applicant: Ryoji Hoshi , Takahiro Yanagimachi
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2004-363916 20041216
- International Application: PCT/JP2005/019385 WO 20051021
- International Announcement: WO2006/064610 WO 20060622
- Main IPC: C30B15/14
- IPC: C30B15/14
Abstract:
The present invention is a method for producing a single crystal that is a multi-pulling method for pulling a plurality of single crystals from a raw material melt in a same crucible in a chamber by a Czochralski method, comprising steps of: pulling a single crystal from a raw material melt ; then additionally charging polycrystalline raw material in a residual raw material melt without turning off power of a heater, and melting the polycrystalline raw material; then pulling a next single crystal; and repeating the steps and thereby pulling the plurality of single crystals.
Public/Granted literature
- US20080184928A1 Method for Producing Single Crystal and a Method for Producing Annealed Wafer Public/Granted day:2008-08-07
Information query
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