Invention Grant
- Patent Title: System, method and apparatus for self-cleaning dry etch
- Patent Title (中): 用于自清洁干蚀刻的系统,方法和设备
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Application No.: US11444942Application Date: 2006-05-31
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Publication No.: US08211238B2Publication Date: 2012-07-03
- Inventor: Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
- Applicant: Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C25F3/12
- IPC: C25F3/12 ; B08B9/027

Abstract:
A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
Public/Granted literature
- US20060219267A1 System, method and apparatus for self-cleaning dry etch Public/Granted day:2006-10-05
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