Invention Grant
US08211322B2 Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same
有权
形成具有纳米凹槽的金属层图案的方法和使用其制造分子尺寸的装置的方法
- Patent Title: Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same
- Patent Title (中): 形成具有纳米凹槽的金属层图案的方法和使用其制造分子尺寸的装置的方法
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Application No.: US12149388Application Date: 2008-04-30
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Publication No.: US08211322B2Publication Date: 2012-07-03
- Inventor: Dong-Gun Park , Dong-Won Kim , Sung-Young Lee , Yang-Kyu Choi , Chang-Hoon Kim , Ju-Hyun Kim
- Applicant: Dong-Gun Park , Dong-Won Kim , Sung-Young Lee , Yang-Kyu Choi , Chang-Hoon Kim , Ju-Hyun Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0042129 20070430
- Main IPC: C23F1/00
- IPC: C23F1/00
Abstract:
A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.
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