Invention Grant
- Patent Title: Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafers
- Patent Title (中): 去除晶体硅太阳能晶片背面上的掺杂表面层的方法
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Application No.: US11917679Application Date: 2006-06-14
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Publication No.: US08211323B2Publication Date: 2012-07-03
- Inventor: Moritz Heintze , Rainer Moeller , Harald Wanka , Elena Lopez , Volkmar Hopfe , Ines Dani , Milan Rosina
- Applicant: Moritz Heintze , Rainer Moeller , Harald Wanka , Elena Lopez , Volkmar Hopfe , Ines Dani , Milan Rosina
- Applicant Address: DE Munich DE Blaubeuren
- Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.,Centrotherm Photovoltaics AG
- Current Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.,Centrotherm Photovoltaics AG
- Current Assignee Address: DE Munich DE Blaubeuren
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: DE102005029154 20050617; DE102005040596 20050816
- International Application: PCT/DE2006/001058 WO 20060614
- International Announcement: WO2006/133695 WO 20061221
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/302
Abstract:
The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.
Public/Granted literature
- US20080305643A1 Method For the Removal of Doped Surface Layers on the Back Faces of Crystalline Silicon Solar Wafers Public/Granted day:2008-12-11
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