Invention Grant
- Patent Title: Copper film deposition method
- Patent Title (中): 铜膜沉积法
-
Application No.: US10591476Application Date: 2005-02-25
-
Publication No.: US08211500B2Publication Date: 2012-07-03
- Inventor: Yasuhiko Kojima , Naoki Yoshii
- Applicant: Yasuhiko Kojima , Naoki Yoshii
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2004-056628 20040301
- International Application: PCT/JP2005/003155 WO 20050225
- International Announcement: WO2005/083152 WO 20050909
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.
Public/Granted literature
- US20070197398A1 Copper film deposition method Public/Granted day:2007-08-23
Information query
IPC分类:
