Invention Grant
- Patent Title: Positive resist composition and patterning process
- Patent Title (中): 正抗蚀剂组成和图案化工艺
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Application No.: US12719229Application Date: 2010-03-08
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Publication No.: US08211618B2Publication Date: 2012-07-03
- Inventor: Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
- Applicant: Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2009-054958 20090309
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30
Abstract:
A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
Public/Granted literature
- US20100227273A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2010-09-09
Information query
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