Invention Grant
US08211626B2 Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes
失效
在90nm特征尺寸的介质电弧表面上保持光致抗蚀剂活性
- Patent Title: Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes
- Patent Title (中): 在90nm特征尺寸的介质电弧表面上保持光致抗蚀剂活性
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Application No.: US11639274Application Date: 2006-12-13
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Publication No.: US08211626B2Publication Date: 2012-07-03
- Inventor: Sang H. Ahn , Sudha Rathi , Heraldo L. Bothelho
- Applicant: Sang H. Ahn , Sudha Rathi , Heraldo L. Bothelho
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Shirley L. Church Esq.
- Main IPC: G03F7/30
- IPC: G03F7/30 ; H05H1/30
Abstract:
We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.
Public/Granted literature
- US20070117050A1 Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes Public/Granted day:2007-05-24
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