Invention Grant
US08211723B2 Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
有权
Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管
- Patent Title: Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
- Patent Title (中): Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管
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Application No.: US12030117Application Date: 2008-02-12
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Publication No.: US08211723B2Publication Date: 2012-07-03
- Inventor: Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/06
Abstract:
A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
Public/Granted literature
- US20080191192A1 Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES Public/Granted day:2008-08-14
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