Invention Grant
- Patent Title: Image sensor with raised photosensitive elements
- Patent Title (中): 具有凸起感光元件的图像传感器
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Application No.: US12208403Application Date: 2008-09-11
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Publication No.: US08211732B2Publication Date: 2012-07-03
- Inventor: Shenlin Chen
- Applicant: Shenlin Chen
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An image sensor having a pixel array comprises periphery elements formed over a substrate, an oxide layer formed over the periphery elements, an epitaxial layer formed in an opening in the oxide layer in a pixel array area, and a plurality of photosensitive elements of the pixel array formed in the epitaxial layer. Formation of an initial metallization layer occurs after the formation of the photosensitive elements in the epitaxial layer. The photosensitive elements can thus be formed in the epitaxial layer at a higher level within an image sensor stack than that of the initial metallization layer. This advantageously allows stack height and pixel size to be reduced, and fill factor to be increased. The image sensor may be implemented in a digital camera or other type of digital imaging device.
Public/Granted literature
- US20100059802A1 IMAGE SENSOR WITH RAISED PHOTOSENSITIVE ELEMENTS Public/Granted day:2010-03-11
Information query
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