Invention Grant
- Patent Title: Lateral phase change memory
- Patent Title (中): 侧向相变记忆
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Application No.: US12883086Application Date: 2010-09-15
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Publication No.: US08211742B2Publication Date: 2012-07-03
- Inventor: Richard Dodge , Guy Wicker
- Applicant: Richard Dodge , Guy Wicker
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Priority: EP05102814 20050408
- Main IPC: H01L21/06
- IPC: H01L21/06

Abstract:
A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.
Public/Granted literature
- US20110003454A1 LATERAL PHASE CHANGE MEMORY Public/Granted day:2011-01-06
Information query
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