Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12810279Application Date: 2008-12-12
-
Publication No.: US08211751B2Publication Date: 2012-07-03
- Inventor: Satoshi Yamamoto , Hirokazu Hashimoto
- Applicant: Satoshi Yamamoto , Hirokazu Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Fujikura Ltd.
- Current Assignee: Fujikura Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-331695 20071225
- International Application: PCT/JP2008/072636 WO 20081212
- International Announcement: WO2009/081763 WO 20090702
- Main IPC: H01L21/50
- IPC: H01L21/50

Abstract:
A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.
Public/Granted literature
- US20100276765A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-11-04
Information query
IPC分类: