Multiple-gate transistors and processes of making same

Invention Grant

US08211771B2 Multiple-gate transistors and processes of making same 有权

Title translation: 多栅极晶体管及其制造方法

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Patent Title: Multiple-gate transistors and processes of making same
Patent Title (中): 多栅极晶体管及其制造方法
Application No.: US13216569

Application Date: 2011-08-24
Publication No.: US08211771B2

Publication Date: 2012-07-03
Inventor: Ravi Pillarisetty , Jack Kavalieros , Marko Radosavljevic , Benjamin Chu-Kung
Applicant: Ravi Pillarisetty , Jack Kavalieros , Marko Radosavljevic , Benjamin Chu-Kung
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agent John N. Greaves
Main IPC: H01L21/336
IPC: H01L21/336

Multiple-gate transistors and processes of making same

Abstract:

A microelectronic device includes a P-I-N (p+ region, intrinsic semiconductor, and n+ region) semiconductive body with a first gate and a second gate. The first gate is a gate stack disposed on an upper surface plane, and the second gate accesses the semiconductive body from a second plane that is out of the first plane.

Abstract(Chinese):

微电子器件包括具有第一栅极和第二栅极的P-I-N（p +区域，本征半导体和n +区域）半导体。第一栅极是设置在上表面平面上的栅极堆叠，并且第二栅极从超出第一平面的第二平面访问半导体本体。

Public/Granted literature

US20110312140A1 MULTIPLE-GATE TRANSISTORS AND PROCESSES OF MAKING SAME Public/Granted day:2011-12-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的