Invention Grant
US08211786B2 CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
有权
CMOS结构包括具有平面栅电极的非平面混合取向衬底和制造方法
- Patent Title: CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
- Patent Title (中): CMOS结构包括具有平面栅电极的非平面混合取向衬底和制造方法
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Application No.: US12039177Application Date: 2008-02-28
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Publication No.: US08211786B2Publication Date: 2012-07-03
- Inventor: Kangguo Cheng
- Applicant: Kangguo Cheng
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph Petrokaitis, Esq.
- Main IPC: H01L21/3205
- IPC: H01L21/3205
Abstract:
A semiconductor structure and a method for fabricating the semiconductor structure include a hybrid orientation substrate having a first active region having a first crystallographic orientation that is vertically separated from a second active region having a second crystallographic orientation different than the first crystallographic orientation. A first field effect device having a first gate electrode is located and formed within and upon the first active region and a second field effect device having a second gate electrode is located and formed within and upon the second active region. Upper surfaces of the first gate electrode and the second gate electrode are coplanar. The structure and method allow for avoidance of epitaxial defects generally encountered when using hybrid orientation technology substrates that include coplanar active regions.
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