Invention Grant
- Patent Title: Semiconductor processing methods
- Patent Title (中): 半导体加工方法
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Application No.: US12959678Application Date: 2010-12-03
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Publication No.: US08211787B2Publication Date: 2012-07-03
- Inventor: Swarnal Borthakur , Richard L. Stocks
- Applicant: Swarnal Borthakur , Richard L. Stocks
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
Some embodiments include methods of forming semiconductor constructions in which a semiconductor material sidewall is along an opening, a protective organic material is over at least one semiconductor material surface, and the semiconductor material sidewall and protective organic material are both exposed to an etch utilizing at least one fluorine-containing composition. The etch is selective for the semiconductor material relative to the organic material, and reduces sharpness of at least one projection along the semiconductor material sidewall. In some embodiments, the opening is a through wafer opening, and subsequent processing forms one or more materials within such through wafer opening to form a through wafer interconnect. In some embodiments, the opening extends to a sensor array, and the protective organic material is comprised by a microlens system over the sensor array. Subsequent processing may form a macrolens structure across the opening.
Public/Granted literature
- US20110070679A1 Semiconductor Processing Methods Public/Granted day:2011-03-24
Information query
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