Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow

Invention Grant

US08211792B2 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow 失效

Title translation: 使用原子氢增强回流的无障碍金铜镶嵌技术

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Patent Title: Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
Patent Title (中): 使用原子氢增强回流的无障碍金铜镶嵌技术
Application No.: US13005231

Application Date: 2011-01-12
Publication No.: US08211792B2

Publication Date: 2012-07-03
Inventor: Kie Y. Ahn , Leonard Forbes
Applicant: Kie Y. Ahn , Leonard Forbes
Applicant Address: CA Ottawa, Ontario
Assignee: Mosaid Technologies Incorporated
Current Assignee: Mosaid Technologies Incorporated
Current Assignee Address: CA Ottawa, Ontario
Agency: Browdy and Neimark, PLLC
Main IPC: H01L21/4763
IPC: H01L21/4763

Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow

Abstract:

A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.

Abstract(Chinese):

提供了一种用于在半导体结构中形成导电触点和互连的方法，以及所得的导电部件。特别地，该方法用于在诸如存储器件和微处理器的集成电路中制造单个或双镶嵌铜触点和互连。

Public/Granted literature

US20110111589A1 BARRIER-METAL-FREE COPPER CAMASCENCE TECHNOLOGY USING ATOMIC HYDROGEN ENHANCED REFLOW Public/Granted day:2011-05-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）