Properties of metallic copper diffusion barriers through silicon surface treatments

Invention Grant

US08211794B2 Properties of metallic copper diffusion barriers through silicon surface treatments 有权

Title translation: 通过硅表面处理的金属铜扩散阻挡层的性能

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Patent Title: Properties of metallic copper diffusion barriers through silicon surface treatments
Patent Title (中): 通过硅表面处理的金属铜扩散阻挡层的性能
Application No.: US11753926

Application Date: 2007-05-25
Publication No.: US08211794B2

Publication Date: 2012-07-03
Inventor: Valli Arunachalam , Satyavolu Srinivas Papa Rao , Sanjeev Aggarwal , Stephan Grunow
Applicant: Valli Arunachalam , Satyavolu Srinivas Papa Rao , Sanjeev Aggarwal , Stephan Grunow
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent Alan A. R. Cooper; Warren L. Franz; Frederick J. Telecky, Jr.
Main IPC: H01L21/4763
IPC: H01L21/4763

Properties of metallic copper diffusion barriers through silicon surface treatments

Abstract:

In accordance with the invention, there are diffusion barriers, integrated circuits, and semiconductor devices and methods of fabricating them. The method of fabricating a diffusion barrier can include providing a dielectric layer, forming a first silicon enriched layer over the dielectric layer by exposing the dielectric layer to a silicon-containing ambient, and forming a barrier layer over the first silicon enriched layer.

Abstract(Chinese):

根据本发明，存在扩散阻挡层，集成电路和半导体器件及其制造方法。制造扩散阻挡层的方法可以包括提供电介质层，通过将电介质层暴露于含硅环境，在介电层上形成第一富硅层，并在第一富硅层上形成阻挡层。

Public/Granted literature

US20080290515A1 PROPERTIES OF METALLIC COPPER DIFFUSION BARRIERS THROUGH SILICON SURFACE TREATMENTS Public/Granted day:2008-11-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）