Invention Grant
- Patent Title: Substrate treating apparatus and method for manufacturing semiconductor device
- Patent Title (中): 基板处理装置及半导体装置的制造方法
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Application No.: US12929444Application Date: 2011-01-25
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Publication No.: US08211798B2Publication Date: 2012-07-03
- Inventor: Takashi Ozaki , Kenichi Suzaki
- Applicant: Takashi Ozaki , Kenichi Suzaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2002-187566 20020627; JP2003-084774 20030326
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) respectively received by the supporting sections (28) are aligned, from a standby chamber (33) to a processing chamber (14), the pressure in the standby chamber (33) and processing chamber (14) is set to 200 pascals or more, and 3000 pascals or less. By supporting the wafer upwards from the receiving section with use of the support section, even if peeling of the film on the wafer occurs from a large frictional force between the supported surface of the wafer and the support section under a reduced pressure, the particles from the peeling are caught by the receiving section and therefore particles are prevented from adhering to the IC fabrication surface of the wafer directly below the receiving section.
Public/Granted literature
- US20110131804A1 Substrate treating apparatus and method for manufacturing semiconductor device Public/Granted day:2011-06-09
Information query
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