According to certain embodiments, Ru is removed from the surface of a semiconductor structure by contact with a cleaning solution comprising one or more selected from permanganate ion, orthoperiodic ion and hypochlorous ion, such that Ru is removed from surfaces of the semiconductor substrate where the presence of Ru is undesirable. In some embodiments, a semiconductor structure is formed or provided having at least one metalized layer formed over an underlying layering or semiconductor substrate. The metalized layer contains a dielectric material with one or more metal wires of copper-containing material formed in a trench and/or via in the dielectric material. A cap layer having Ru is formed on the surface of the copper-containing material forming the one or more metal wires. The semiconductor structure is contacted with the cleaning solution comprising one or more selected from permanganate ion, orthoperiodic ion and hypochlorous ion to remove a portion of the Ru present in the semiconductor structure.