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US08211844B2 Method for cleaning a semiconductor structure and chemistry thereof 有权
半导体结构的清洗方法及其化学方法

  • Patent Title: Method for cleaning a semiconductor structure and chemistry thereof
  • Patent Title (中): 半导体结构的清洗方法及其化学方法
  • Application No.: US12091033
    Application Date: 2005-10-21
  • Publication No.: US08211844B2
    Publication Date: 2012-07-03
  • Inventor: Balgovind Sharma
  • Applicant: Balgovind Sharma
  • Applicant Address: US TX Austin
  • Assignee: Freescale Semiconductor, Inc.
  • Current Assignee: Freescale Semiconductor, Inc.
  • Current Assignee Address: US TX Austin
  • International Application: PCT/EP2005/013518 WO 20051021
  • International Announcement: WO2007/045269 WO 20070426
  • Main IPC: H01L21/306
  • IPC: H01L21/306
Method for cleaning a semiconductor structure and chemistry thereof
Abstract:
A method for removing a etch residue (e.g., polymer or particle) from a semiconductor structure and using a cleaning chemistry and the composition of the chemistry is described. By providing a semiconductor structure with etch residue on it, the semiconductor substrate is then placed in a chemistry to remove the particle, wherein the chemistry comprises dilute hydrofluoric acid and a carboxylic acid. In one embodiment the carboxylic acid is selected from tartaric acid, acetic acid, citric acid, glycolic acid, oxalic acid, salicyclic acid, or phthalic acid, and the dilute hydrofluoric acid is approximately 0.1 weight % of hydrofluoric acid.
Abstract(Chinese):

描述了从半导体结构中去除蚀刻残留物（例如聚合物或颗粒）并使用清洁化学品和化学组成的方法。 通过在其上提供具有蚀刻残留物的半导体结构，然后将半导体衬底放置在化学中以除去颗粒，其中化学性质包括稀氢氟酸和羧酸。 在一个实施方案中，羧酸选自酒石酸，乙酸，柠檬酸，乙醇酸，草酸，水杨酸或邻苯二甲酸，稀氢氟酸为约0.1重量％的氢氟酸。

Public/Granted literature
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
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