Invention Grant
US08212141B2 Organic semiconductor radiation/light sensor and radiation/light detector
有权
有机半导体辐射/光传感器和辐射/光检测器
- Patent Title: Organic semiconductor radiation/light sensor and radiation/light detector
- Patent Title (中): 有机半导体辐射/光传感器和辐射/光检测器
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Application No.: US12278552Application Date: 2006-10-20
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Publication No.: US08212141B2Publication Date: 2012-07-03
- Inventor: Hitoshi Miyata , Yoshimasa Fujigaki , Yoji Yamaguchi , Yoshinori Muto , Masaaki Tamura
- Applicant: Hitoshi Miyata , Yoshimasa Fujigaki , Yoji Yamaguchi , Yoshinori Muto , Masaaki Tamura
- Applicant Address: JP Niigata JP Tokyo
- Assignee: Niigata University,Japan Carlit Co., Ltd.
- Current Assignee: Niigata University,Japan Carlit Co., Ltd.
- Current Assignee Address: JP Niigata JP Tokyo
- Agency: McDermott Will & Emery LLP
- Agent Louis J. DelJuidice, Esq.
- Priority: JP2006-030324 20060207
- International Application: PCT/JP2006/320925 WO 20061020
- International Announcement: WO2007/091352 WO 20070816
- Main IPC: H01L31/042
- IPC: H01L31/042

Abstract:
There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wire 2 is embedded in an organic semiconductor 1. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wire 2 by means of applying a high voltage to the signal amplification wire 2, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.
Public/Granted literature
- US20090050815A1 ORGANIC SEMICONDUCTOR RADIATION/LIGHT SENSOR AND RADIATION/LIGHT DETECTOR Public/Granted day:2009-02-26
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