Invention Grant
- Patent Title: Thermoelectric device and method of forming the same, temperature sensing sensor, and heat-source image sensor using the same
- Patent Title (中): 热电装置及其形成方法，温度感测传感器和使用其的热源图像传感器
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Application No.: US12987459Application Date: 2011-01-10
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Publication No.: US08212212B2Publication Date: 2012-07-03
- Inventor: Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
- Applicant: Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-0013877 20100216; KR10-2010-0088107 20100908
- Main IPC: G02F1/01
- IPC: G02F1/01
Abstract:
Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
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