Invention Grant
US08212225B2 TEM grids for determination of structure-property relationships in nanotechnology
有权
用于确定纳米技术中结构 - 性质关系的TEM网格
- Patent Title: TEM grids for determination of structure-property relationships in nanotechnology
- Patent Title (中): 用于确定纳米技术中结构 - 性质关系的TEM网格
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Application No.: US12600764Application Date: 2008-05-19
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Publication No.: US08212225B2Publication Date: 2012-07-03
- Inventor: James E. Hutchison , Gregory J. Kearns
- Applicant: James E. Hutchison , Gregory J. Kearns
- Applicant Address: US OR Eugene
- Assignee: State of Oregon acting by and through the State Board of Higher Education on behalf of the University of Oregon
- Current Assignee: State of Oregon acting by and through the State Board of Higher Education on behalf of the University of Oregon
- Current Assignee Address: US OR Eugene
- Agency: Klarquist Sparkman, LLP
- International Application: PCT/US2008/064152 WO 20080519
- International Announcement: WO2009/035727 WO 20090319
- Main IPC: H01J37/20
- IPC: H01J37/20 ; B32B3/10 ; C23F1/00

Abstract:
Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.
Public/Granted literature
- US20100155620A1 TEM GRIDS FOR DETERMINATION OF STRUCTURE-PROPERTY RELATIONSHIPS IN NANOTECHNOLOGY Public/Granted day:2010-06-24
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