Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11635052Application Date: 2006-12-07
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Publication No.: US08212238B2Publication Date: 2012-07-03
- Inventor: Kiyoshi Kato , Toshihiko Saito , Tamae Takano
- Applicant: Kiyoshi Kato , Toshihiko Saito , Tamae Takano
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-376626 20051227
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00

Abstract:
An object of the present invention to provide a semiconductor device having a highly functional memory element with improved reliability, and to provide a technique for manufacturing such a highly reliable semiconductor device with a high yield at low cost without complicating an apparatus or a process. As a top view shape of a memory element, a rectangular shape having a projection and a depression on the periphery, a zigzagged shape having one or plural bends, a comb shape, a ring shape having an opening (space) inside, or the like is used. Alternatively, a rectangle with a ratio of a long side to a short side being high, an ellipse with a ratio of a long axis to a short axis being high, or the like can also be used.
Public/Granted literature
- US20070147104A1 Semiconductor device and manufacturing method thereof Public/Granted day:2007-06-28
Information query
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