Invention Grant
US08212246B2 N-type doping in metal oxides and metal chalcogenides by electrochemical methods
有权
通过电化学方法在金属氧化物和金属硫族化物中进行N型掺杂
- Patent Title: N-type doping in metal oxides and metal chalcogenides by electrochemical methods
- Patent Title (中): 通过电化学方法在金属氧化物和金属硫族化物中进行N型掺杂
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Application No.: US12540933Application Date: 2009-08-13
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Publication No.: US08212246B2Publication Date: 2012-07-03
- Inventor: Meng Tao , Xiaofei Han
- Applicant: Meng Tao , Xiaofei Han
- Applicant Address: US TX Austin
- Assignee: Board of Regents, The University of Texas System
- Current Assignee: Board of Regents, The University of Texas System
- Current Assignee Address: US TX Austin
- Agency: Chowdhury & Georgakis, P.C.
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
Methods and systems for electrochemically depositing doped metal oxide and metal chalcogenide films are disclosed. An example method includes dissolving a metal precursor into a solution, adding a halogen precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit halogen doped metal oxide or metal chalcogenide onto a substrate. Another example method includes dissolving a zinc precursor into a solution, adding an yttrium precursor to the solution, and applying a potential between a working electrode and a counter electrode of an electrochemical cell to deposit yttrium doped zinc oxide onto a substrate. Other embodiments are described and claimed.
Public/Granted literature
- US20100038638A1 N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods Public/Granted day:2010-02-18
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