Invention Grant
- Patent Title: Amorphous oxide and field effect transistor
- Patent Title (中): 无定形氧化物和场效应晶体管
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Application No.: US12742977Application Date: 2008-12-25
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Publication No.: US08212248B2Publication Date: 2012-07-03
- Inventor: Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
- Applicant: Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-001336 20080108
- International Application: PCT/JP2008/073924 WO 20081225
- International Announcement: WO2009/087943 WO 20090716
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.
Public/Granted literature
- US20100276685A1 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR Public/Granted day:2010-11-04
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