Invention Grant
- Patent Title: Active matrix substrate
- Patent Title (中): 有源矩阵基板
-
Application No.: US12531406Application Date: 2008-02-29
-
Publication No.: US08212251B2Publication Date: 2012-07-03
- Inventor: Yoshimizu Moriya , Mutsumi Nakajima , Yasuyoshi Kaise , Makoto Kita , Hiroshi Matsukizono , Yoshiyuki Itoh
- Applicant: Yoshimizu Moriya , Mutsumi Nakajima , Yasuyoshi Kaise , Makoto Kita , Hiroshi Matsukizono , Yoshiyuki Itoh
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2007-069141 20070316
- International Application: PCT/JP2008/053690 WO 20080229
- International Announcement: WO2008/114599 WO 20080925
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
In an active-matrix substrate (100) according to the present invention, a semiconductor layer (110) has a first gettering region (112) adjacent to the source region (132) of a first thin-film transistor (130), a second gettering region (114) adjacent to the drain region (146) of a second thin-film transistor (140), and a third gettering region (116) adjacent to any of the source and drain regions located between the respective channel regions (134 and 144) of the first and second thin-film transistors (130 and 140) among the source and drain regions of the thin-film transistors included in the thin-film transistor element (120).
Public/Granted literature
- US20100044710A1 ACTIVE MATRIX SUBSTRATE Public/Granted day:2010-02-25
Information query
IPC分类:
