Invention Grant
US08212260B2 P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material
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P型半导体材料，半导体器件，有机电致发光器件以及P型半导体材料的制造方法
- Patent Title: P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material
- Patent Title (中): P型半导体材料，半导体器件，有机电致发光器件以及P型半导体材料的制造方法
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Application No.: US12311886Application Date: 2007-09-28
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Publication No.: US08212260B2Publication Date: 2012-07-03
- Inventor: Masahiro Orita , Takashi Narushima , Hiroaki Yanagida
- Applicant: Masahiro Orita , Takashi Narushima , Hiroaki Yanagida
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-287995 20061023
- International Application: PCT/JP2007/068971 WO 20070928
- International Announcement: WO2008/050579 WO 20080502
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×1018 to 5×1020 cm−3 of Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.
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