A light emitting diode includes an n-GaN layer on a substrate, an active layer exposing a part of the n-GaN layer, a p-GaN layer on the active layer, a cathode contacting the exposed n-GaN layer and extending from one side of the active layer toward the other side, and an anode formed on the p-GaN layer and including a plurality of sub-electrodes spaced apart from both sides of the cathode and an edge of the active layer at the same distance.