Invention Grant
US08212281B2 3-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same
有权
用于交叉点，可变电阻材料存储器的3-D和3-D肖特基二极管，其形成方法及其使用方法
- Patent Title: 3-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same
- Patent Title (中): 用于交叉点，可变电阻材料存储器的3-D和3-D肖特基二极管，其形成方法及其使用方法
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Application No.: US12014939Application Date: 2008-01-16
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Publication No.: US08212281B2Publication Date: 2012-07-03
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Jun Liu , Michael P. Violette
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.
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