The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.