Invention Grant
US08212289B2 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
有权
能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）
- Patent Title: Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
- Patent Title (中): 能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）
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Application No.: US12270063Application Date: 2008-11-13
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Publication No.: US08212289B2Publication Date: 2012-07-03
- Inventor: Richard Peter Smith , Scott T. Sheppard , Adam William Saxler , Yifeng Wu
- Applicant: Richard Peter Smith , Scott T. Sheppard , Adam William Saxler , Yifeng Wu
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L31/072
Abstract:
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about −3.3 to about −14 volts and a normal operating temperature for at least about 10 hours.
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