Invention Grant
- Patent Title: Capacitor and method for fabricating the same
- Patent Title (中): 电容器及其制造方法
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Application No.: US13008831Application Date: 2011-01-18
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Publication No.: US08212301B2Publication Date: 2012-07-03
- Inventor: Jong-Bum Park
- Applicant: Jong-Bum Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2007-0026087 20070316
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer. The third dielectric layer can be thicker than the first dielectric layer.
Public/Granted literature
- US20110116209A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-05-19
Information query
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