Invention Grant
US08212327B2 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
有权
高填充因子激光处理的半导体器件在散装材料上具有单面接触方案
- Patent Title: High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
- Patent Title (中): 高填充因子激光处理的半导体器件在散装材料上具有单面接触方案
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Application No.: US12853172Application Date: 2010-08-09
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Publication No.: US08212327B2Publication Date: 2012-07-03
- Inventor: Neal T. Kurfiss , James E. Carey , Xia Li
- Applicant: Neal T. Kurfiss , James E. Carey , Xia Li
- Applicant Address: US MA Beverly
- Assignee: SiOnyx, Inc.
- Current Assignee: SiOnyx, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Thorpe North & Western LLP
- Priority: WOPCT/US2009/036409 20090306
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L47/00 ; H01L29/06 ; H01L29/24 ; H01L29/38 ; H01L29/30 ; H01L29/36 ; H01L29/40 ; H01L31/111 ; H01L29/732 ; H01L27/148 ; H01L31/062 ; H01L29/861
Abstract:
The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.
Public/Granted literature
- US20110042773A1 HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME Public/Granted day:2011-02-24
Information query
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