Invention Grant
- Patent Title: Bias-controlled deep trench substrate noise isolation integrated circuit device structures
- Patent Title (中): 偏置控制深沟槽衬底噪声隔离集成电路器件结构
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Application No.: US13207480Application Date: 2011-08-11
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Publication No.: US08212332B2Publication Date: 2012-07-03
- Inventor: Phillip Francis Chapman , David Goren , Rajendran Krishnasamy , Benny Sheinman , Shlomo Shlafman , Raminderpal Singh , Wayne H. Woods
- Applicant: Phillip Francis Chapman , David Goren , Rajendran Krishnasamy , Benny Sheinman , Shlomo Shlafman , Raminderpal Singh , Wayne H. Woods
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Zaretsky Howie Woods Oviatt Gilman LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119 ; H01L29/00

Abstract:
A novel and useful apparatus for and method of providing noise isolation between integrated circuit devices on a semiconductor chip. The invention addresses the problem of noise generated by digital switching devices in an integrated circuit chip that may couple through the silicon substrate into sensitive analog circuits (e.g., PLLs, transceivers, ADCs, etc.) causing a significant degradation in performance of the sensitive analog circuits. The invention utilizes a deep trench capacitor (DTCAP) device connected to ground to isolate victim circuits from aggressor noise sources on the same integrated circuit chip. The deep penetration of the capacitor creates a grounded shield deep in the substrate as compared with other prior art shielding techniques.
Public/Granted literature
- US20110291238A1 BIAS-CONTROLLED DEEP TRENCH SUBSTRATE NOISE ISOLATION INTEGRATED CIRCUIT DEVICE STRUCTURES Public/Granted day:2011-12-01
Information query
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