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US08212332B2 Bias-controlled deep trench substrate noise isolation integrated circuit device structures 有权
偏置控制深沟槽衬底噪声隔离集成电路器件结构

Bias-controlled deep trench substrate noise isolation integrated circuit device structures
Abstract:
A novel and useful apparatus for and method of providing noise isolation between integrated circuit devices on a semiconductor chip. The invention addresses the problem of noise generated by digital switching devices in an integrated circuit chip that may couple through the silicon substrate into sensitive analog circuits (e.g., PLLs, transceivers, ADCs, etc.) causing a significant degradation in performance of the sensitive analog circuits. The invention utilizes a deep trench capacitor (DTCAP) device connected to ground to isolate victim circuits from aggressor noise sources on the same integrated circuit chip. The deep penetration of the capacitor creates a grounded shield deep in the substrate as compared with other prior art shielding techniques.
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