Invention Grant
- Patent Title: Semiconductor package having chip using copper process
- Patent Title (中): 具有使用铜工艺的芯片的半导体封装
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Application No.: US12649092Application Date: 2009-12-29
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Publication No.: US08212349B2Publication Date: 2012-07-03
- Inventor: Hung-Hsin Hsu , Chin-Ming Hsu , Jui-Ching Hsu
- Applicant: Hung-Hsin Hsu , Chin-Ming Hsu , Jui-Ching Hsu
- Applicant Address: TW Hukou Shiang, Hsinchu
- Assignee: Powertech Technology Inc.
- Current Assignee: Powertech Technology Inc.
- Current Assignee Address: TW Hukou Shiang, Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L23/498

Abstract:
A semiconductor package having chip using copper process is revealed. A chip using copper process is disposed on a substrate. The substrate has a core layer, a copper circuitry with connecting pads, a patterned diffusion barrier, and a solder mask. The copper circuitry is formed on the core layer. The patterned diffusion barrier has such a pattern identical to the one of the copper circuitry that an upper surface of the copper circuitry is completely covered. The substrate further has a bonding layer formed on a portion of the patterned diffusion barrier inside the solder mask's opening. Therefore, diffusion of copper ions from the copper circuitry of the substrate to the active surface of the chip can be avoided to prevent function failure of the chip.
Public/Granted literature
- US20110156238A1 SEMICONDUCTOR PACKAGE HAVING CHIP USING COPPER PROCESS Public/Granted day:2011-06-30
Information query
IPC分类: