Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12603106Application Date: 2009-10-21
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Publication No.: US08212362B2Publication Date: 2012-07-03
- Inventor: Kiyonori Watanabe
- Applicant: Kiyonori Watanabe
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates, LLC
- Priority: JP2006-194658 20060714
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device includes a semiconductor chip having a first main surface having an electrode pad in an exposed state, and an interlayer insulation layer formed on the first main surface so that the electrode pad is partially exposed; a re-wiring layer including a wiring pattern having a linear portion having one end portion electrically connected to the electrode pad and extending from the electrode pad, and a post electrode mounting portion with a recessed polygonal shape and connected to the other end portion of the linear portion; a post electrode formed on the post electrode mounting portion and having a bottom surface with a contour crossing an upper contour of the post electrode mounting portion at more than two points; a sealing portion disposed so that a top of the post electrode is exposed; and an outer terminal formed on the top of the post electrode.
Public/Granted literature
- US20100038779A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-02-18
Information query
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