Invention Grant
- Patent Title: Stacked NMOS DC-to-DC power conversion
- Patent Title (中): 堆叠的NMOS直流到直流电源转换
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Application No.: US12646213Application Date: 2009-12-23
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Publication No.: US08212536B2Publication Date: 2012-07-03
- Inventor: Lawrence M. Burns , David Fisher
- Applicant: Lawrence M. Burns , David Fisher
- Applicant Address: US CA Sunnyvale
- Assignee: R2 Semiconductor, Inc.
- Current Assignee: R2 Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Brian R. Short
- Main IPC: G05F1/613
- IPC: G05F1/613

Abstract:
Embodiments for at least one method and apparatus of generating a regulated voltage are disclosed. One method includes generating the regulated voltage though controlled closing and opening of a series switch element and shunt switch element, the series switch element being connected between a first voltage supply and a common node, and the shunt switch being connected between the common node and a second supply voltage. The series switch element includes an NMOS series switching transistor stacked with an NMOS series protection transistor, and closing the series switch element during a first period includes applying a switching gate voltage to a gate of the NMOS series switch transistor of the series switch element, wherein the switching gate voltage has a voltage potential of at least a threshold voltage greater than a voltage potential of the common node. The shunt switch element includes an NMOS shunt switching transistor stacked with an NMOS shunt protection transistor, and the shunt switch element is closed during a second period.
Public/Granted literature
- US20110148368A1 Stacked NMOS DC-To-DC Power Conversion Public/Granted day:2011-06-23
Information query
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